Method for manufacturing a nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured thereby

Abstract

There is provided a method of manufacturing a nitride semiconductor light emitting device, the method including: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first conductivity-type nitride semiconductor layer, an active layer and a second conductivity-type nitride semiconductor layer sequentially stacked on a substrate; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film.

Dependencies are inferred from the claim text.