Light emitting device

A light emitting device comprising:

• a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
• a first electrode electrically connected to the first conductive semiconductor layer and provided under the light emitting structure;
• a second electrode electrically connected to the second conductive semiconductor layer and provided under the light emitting structure;
• a plurality of first contact portions provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer;
• and
• an insulating ion implantation layer provided around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer,
• wherein the first contact portions are spaced apart from each other and provided on a top surface of the first conductive semiconductor layer.

A light emitting device comprising:

• a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
• a first electrode electrically connected to the first conductive semiconductor layer and provided under the light emitting structure;
• a second electrode electrically connected to the second conductive semiconductor layer and provided under the light emitting structure;
• a plurality of first contact portions disposed through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer;
• and
• an insulating ion implantation layer disposed around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer,
• wherein the insulating ion implantation layer is provided through the active layer and the second conductive semiconductor layer, and
• wherein the plurality of first contact portions have widths in a range of about 3 μm to about 5 μm.