Nanoparticle-based memristor structure
AssigneeHewlett-Packard Development Company, L.P.
InventorsXia Sheng, Zhang-Lin Zhou, Richard H. Henze
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Abstract
A memristor structure has two electrodes sandwiching an insulating region, and includes a nanoparticle providing a conducting path between the two electrodes, wherein either the insulating region comprises an inorganic material and nanoparticle comprises a solid nanoparticle or a core/shell nanoparticle or the insulating region comprises an inorganic or organic material and the nanoparticle comprises a core/shell nanoparticle.
Claims20
A memristor structure comprising two electrodes sandwiching an insulating region, and including a nanoparticle providing a conducting path between the two electrodes,
- wherein
- the insulating region comprises an inorganic or organic material and the nanoparticle comprises a core/shell nanoparticle.
(canceled)
A method for making memristors that comprise a bottom electrode and a top electrode sandwiching an insulating region, and including a nanoparticle providing a conducting path between the bottom electrode and the top electrode, the insulating region comprising an inorganic or organic material and the nanoparticle comprising a core/shell nanoparticle, the method including:
- providing the bottom electrode;
- forming the nanoparticle on the bottom electrode by a self-assembly process;
- depositing a layer of insulating material to form the insulating region;
- and
- forming the top electrode on the insulating region.
(canceled)
Dependencies are inferred from the claim text.