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AssigneeHitachi Metals, Ltd.
InventorsKentaro Ino, Takeshi Shimada, Itaro Ueda, Toshiki Kida
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The present invention provides a semiconductor ceramic composition which is represented by a composition formula of [(Bi.A)x(Ba1-yRy)1-x](Ti1-zMz)aO3 (in which A is at least one kind of Na, Li and K, R is at least one kind of rare earth elements (including Y), and M is at least one kind of Nb, Ta and Sb), in which a, x, y and z satisfy 0.90≦a≦1.10, 0<x≦0.30, 0≦y≦0.050 and 0≦z≦0.010 and an average distance between voids, which is an average value of a space between voids being internally present, is 1.0 μm or more and 8.0 μm or less.
A semiconductor ceramic composition which is represented by a composition formula of [(Bi.A)x(Ba1-yRy)1-x](Ti1-zMz)aO3 (wherein A is at least one kind of Na, Li and K, R is at least one kind of rare earth elements (including Y), and M is at least one kind of Nb, Ta and Sb), wherein a, x, y and z satisfy 0.90≦a≦1.10, 0<x≦0.30, 0≦y≦0.050 and 0≦z≦0.010, and an average distance between voids, which is an average value of a space between voids being internally present, is 1.0 μm or more and 8.0 μm or less.
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Dependencies are inferred from the claim text.