Plasma processing method and plasma processing apparatus

A plasma processing apparatus comprising:

• a chamber in which a plasma process is performed on a target object;
• an exhaust unit configured to depressurize an inside of the chamber;
• a gas supply unit configured to supply a processing gas into the inside of the chamber;
• and
• a control unit configured to form a silicon oxide film on a surface of a member provided within the chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member within the chamber to be lower than a temperature of another member;
• perform a plasma process on the target object loaded into the chamber with plasma of the processing gas after the silicon oxide film is formed on the surface of the member;
• and remove the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.