Treatment method of electrodeposited copper for wafer-level-packaging process flow

An apparatus for treating a copper containing structure in an integrated circuit package, comprising

• an electroplating cell;
• an annealing station;
• and
• a controller with instructions for performing the following operations:
• (a) in the electroplating cell, electrodepositing the copper containing structure on a substrate, wherein the copper containing structure is configured to deliver current between one or more ports and one or more solder structures in the integrated circuit package;
• (b) in the annealing station, annealing the copper containing structure;
• and
• (c) after annealing the copper containing structure, forming an interface between a pad on the copper containing structure and one of the solder structures, wherein the interface between the pad and the solder structure has improved resistance to interfacial voiding at the interface.