Method for making semiconductor device and semiconductor device made thereby

Abstract

Disclosed is a method for yield enhancement of making a semiconductor device. The method for yield enhancement of making a semiconductor device comprises the steps of: providing the semiconductor device comprising an epitaxial layer including a defect; forming a dielectric layer on the epitaxial layer; detecting and identifying a location of the defect; and etching the dielectric layer and leaving a part of the dielectric layer to cover an area substantially corresponding to the detected defect. The semiconductor device made by the method is also disclosed.

Dependencies are inferred from the claim text.