Synthesis method of cu(in,ga)se2 nanorod or nanowire and materials including the same

Abstract

A method of fabricating CIGS nanorod or nanowire according to one exemplary embodiment of the present disclosure comprises a deposition preparation step of placing a raw material including copper, indium, gallium and selenium and a substrate, and a deposition step of growing CIGS nanorod or nanowire on the substrate by maintaining an internal temperature of a reactor, in which carrier gas flows at a constant flow rate, at a temperature in the range of 850 to 1000° C. According to the method, Cu(In,Ga)Se2 nanorod or nanowire as a direct transition type semiconductor material having substantially uniform composition, high crystallinity and high light absorption ratio can be fabricated.

Dependencies are inferred from the claim text.