In situ chamber clean with inert hydrogen helium mixture during wafer process
AssigneeApplied Materials, Inc.
InventorsRobert Dinsmore, John C. Forster, Song-Moon Sun, Cheng-Hsiung Tsai, Glen T. Mori
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Abstract
Embodiments of the present invention generally relate to a method for cleaning a processing chamber during substrate processing. During a first substrate processing step, a plasma is formed from a gas mixture of argon, helium, and hydrogen in the processing chamber. In a second substrate processing step, an argon plasma is formed in the processing chamber.
Claims14
A method for cleaning a processing chamber, comprising:
- forming a plasma of a gas mixture of argon gas, helium gas, and hydrogen gas in the processing chamber during a first substrate processing step, wherein a temperature of a substrate is less than about 120° C. during the first substrate processing step;
- and
- forming an argon plasma in the processing chamber during a second substrate processing step.
(canceled)
The method of 2, wherein a lesser amount of the polyimide compound is deposited on an interior surface of the chamber during the first substrate processing step as compared to the second substrate processing step.
The method of 2, wherein the hydrogen gas reacts with the polyimide compound to form a hydrocarbon compound.
The method of 6, wherein the polyimide compound removed from the surface of the substrate reacts with the hydrogen gas before the polyimide compound can be deposited on an interior surface of the chamber.
The method of 6, wherein the hydrogen gas reacts with a polyimide compound previously deposited on an interior surface of the chamber.
The method of 6, wherein the hydrocarbon compound is subsequently evacuated from the chamber.
(canceled)
Dependencies are inferred from the claim text.