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US 2014/0196660 A1Published application
Nitride semiconductor crystal producing method
AssigneeHitachi Metals, Ltd.
InventorsHajime FUJIKURA, Taichiroo KONNO, Yuichi OSHIMA
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Abstract
A nitride semiconductor crystal producing method, includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
Claims15
A nitride semiconductor crystal producing method, comprising:
- growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
Dependencies are inferred from the claim text.