Three-dimensional mask model for photolithography simulation
AssigneeASML Netherlands B.V.
InventorsPeng LIU, Yu Cao, Luoqi Chen, Jun Ye
Life of this patent
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AssigneeASML Netherlands B.V.
InventorsPeng LIU, Yu Cao, Luoqi Chen, Jun Ye
Estimating the term…
A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
A method implemented by a computer for creating a three-dimensional mask model, the method comprising:
A method implemented by a computer for creating a three-dimensional mask model, the method comprising:
Dependencies are inferred from the claim text.