Photo resist trimmed line end space

A method for forming a line end space structure, comprising:

• forming a first patterned second hard mask (HM) region based on a first patterned first photo resist (PR) region, the first patterned second HM region associated with a first pattern location;
• forming a trim PR region above at least some of at least one of the first patterned second HM region or a first HM region;
• forming a window within the trim PR region;
• removing at least some of the first patterned second HM region based on the window;
• removing the trim PR region;
• forming at least one of a first sacrificial HM region, a second sacrificial HM region, or a spacer region;
• and
• removing at least some of at least one of the spacer region, the second sacrificial HM region not associated with the spacer region, the first sacrificial HM region not associated with the spacer region, the second sacrificial HM region, the first HM region not associated with the first sacrificial HM region, the first sacrificial HM region, the first HM region not associated with the first patterned second HM region, or the base region not associated with the first HM region.

A method for forming a line end space structure, comprising:

• forming one or more patterned second hard mask (HM) regions based on one or more corresponding patterned first photo resist (PR) regions, respective patterned second HM regions associated with one or more pattern locations;
• removing at least some of at least one of the patterned second HM regions;
• forming at least one of a first sacrificial HM region, a second sacrificial HM region, or a spacer region;
• and
• removing at least some of at least one of the spacer region, the second sacrificial HM region not associated with the spacer region, the first sacrificial HM region not associated with the spacer region, the second sacrificial HM region, the first HM region not associated with the first sacrificial HM region, the first sacrificial HM region, the first HM region not associated with at least one of the patterned second HM regions, or the base region not associated with the first HM region.