Method of plasma processing and apparatuses using the method

A plasma processing device comprising:

• a plasma chamber;
• an RF output circuit outside and above the plasma chamber;
• a first RF power generation circuit configured to output a first RF power having a first frequency and a first duty ratio to the RF output circuit;
• and
• a second RF power generation circuit configured to output a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio to the RF output circuit,
• wherein the first RF power generation circuit and the second RF generation circuit are configured to output the first RF power and the second RF power, respectively, synchronously.

A method of manufacturing a semiconductor device comprising:

• outputting a first RF power having a first frequency and a first duty ratio to an RF output circuit;
• outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio to the RF output circuit;
• outputting a third RF power to a bias electrode inside the plasma chamber;
• generating plasma inside the plasma chamber using an energy output from the RF output circuit and an energy output from the bias electrode;
• and
• processing a wafer on the bias electrode using an ion energy generated by the plasma,
• wherein the outputting of the first RF power and the outputting of the second RF power are synchronized with each other.

An RF power generation module comprising:

• a first RF power generation circuit configured to output a first RF power having a first frequency and a first duty ratio to an RF output circuit through a first transmission line;
• and
• a second RF power generation circuit configured to output a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio to the RF output circuit through a second transmission line,
• wherein the first RF power generation circuit and the second RF generation circuit are configured to output the first RF power and the second RF power, respectively, synchronously.