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AssigneeTokyo Electron Limited
InventorsMasaya Kawamata, Masanobu Honda, Kazuhiro Kubota
Estimating the term…
A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.
A plasma etching apparatus that etches a substrate using a processing gas converted into plasma, the plasma etching apparatus comprising:
A plasma etching method for etching a substrate using a processing gas converted into plasma, the plasma etching method comprising:
Dependencies are inferred from the claim text.