Composition for forming titanium-containing resist underlayer film and patterning process

Abstract

The invention provides a composition for forming a titanium-containing resist underlayer film comprising: as component (A), a silicon-containing compound obtained by hydrolysis and/or condensation of one or more kinds of silicon compounds shown by the following general formula (A-I) and, as component (B), a titanium-containing compound obtained by hydrolysis and/or condensation of one or more kinds of hydrolysable titanium compounds shown by the following general formula (B-I). There can be provided a composition for forming a titanium-containing resist underlayer film to form a resist underlayer film having an excellent adhesiveness in fine patterning and an excellent etching selectivity relative to a conventional organic film and a silicon-containing film.

Dependencies are inferred from the claim text.