Multi-patterning method and device formed by the method

A multi-patterning method comprising:

• patterning at least two first openings in a hard mask layer over a substrate using a first mask;
• forming a conformal layer of a spacer material over the substrate and the hard mask layer;
• and
• anisotropically etching the conformal layer to remove portions of the conformal layer above a height of a top surface of the hard mask layer to form spacers within each of the at least two first openings, each spacer having a spacer opening therein for forming a respective first circuit pattern over the substrate, wherein each spacer comprises the spacer material defining a pattern-free region adjacent to a respective one of the at least two first circuit patterns, and
• selectively etching portions of the hard mask without substantially etching the spacer material, for forming a second circuit pattern trench in the hard mask layer using a second mask, wherein the second circuit pattern trench is located between and excluded from the pattern-free regions adjacent the at least two first circuit patterns.