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US 2014/0193971 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSeiko Instruments Inc.
InventorMasaru AKINO
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Abstract
The semiconductor device includes: a semiconductor substrate; an insulating film provided on a surface of the semiconductor substrate; a porous metal film provided on the insulating film; a protective film provided on the porous metal film, and having an opening portion for defining a pad region; and a wire wire-bonded to the porous metal film in the pad region. The stress generated by the impact of wire-bonding is mostly absorbed in the porous metal film owing to the distortion of the porous metal film, preventing generation of cracks in the insulating film.
Claims6
A method of manufacturing a semiconductor device, comprising:
- providing an insulating film on a surface of a semiconductor substrate;
- forming a porous metal film on a region of the insulating film, the porous metal film containing numerous voids;
- providing a protective film on the porous metal film;
- providing an opening portion in the protective film on the porous metal film, the opening portion defining a pad region;
- and
- wire-bonding a wire to the porous metal film in the pad region.
3 more elements
Dependencies are inferred from the claim text.