Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same

An apparatus for forming an epitaxial layer on a substrate, the apparatus comprising:

• a reaction chamber;
• a boat arranged in the reaction chamber and configured to receive a plurality of substrates;
• a heater provided to the reaction chamber to heat the reaction chamber;
• an injecting unit arranged in the reaction chamber to inject a source gas and an etching gas to the substrates in the boat;
• and
• a decomposing unit for decomposing the etching gas introduced into the injecting unit to form decomposed etching gases.

A system for forming an epitaxial layer, the system comprising:

• a plurality of loadlock chambers in which a plurality of substrates is on standby;
• a plasma etching chamber arranged in front of the loadlock chambers to remove native oxide layers on the substrates;
• apparatuses arranged in front of the loadlock chambers to form the epitaxial layer on the substrates;
• and
• a transfer chamber arranged between the loadlock chambers and the plasma etching chamber and between the loadlock chambers and the apparatuses to transfer the substrates,
• wherein each of the apparatuses comprises;
• a reaction chamber;
• a boat arranged in the reaction chamber and configured to receive the substrates;
• a heater provided to the reaction chamber to heat the reaction chamber;
• an injecting unit arranged in the reaction chamber to inject a source gas and an etching gas to the substrates in the boat;
• and
• a decomposing unit for decomposing the etching gas introduced into the injecting unit to form decomposed etching gases.