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US 2014/0193965 A1Published application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS
AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorsRachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, JR., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
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Abstract
A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.
Claims11
A method comprising:
- providing an off-axis 4H—SiC substrate;
- and
- etching the surface of the substrate with hydrogen or an inert gas.
Dependencies are inferred from the claim text.