Method of manufacturing semiconductor device

A method of manufacturing semiconductor device by a supercritical fluid carried with a co-solvent to modify the defects of semiconductor device, comprising:

• forming a gate dielectric layer on a gate by conducting a first hydrogen plasma treatment;
• forming an active layer on the gate dielectric layer by conducting a second hydrogen plasma treatment;
• and
• disposing a source and a drain on the active layer, wherein the semiconductor device having a plurality of defects, and the active layer being a metal oxide thin film;
• annealing the semiconductor device, wherein the temperature for annealing the semiconductor device is between 350° C. and 450° C.;
• transferring the semiconductor device into a chamber at 100° C. to 200° C. and 1500 psi to 3000 psi;
• and
• injecting a supercritical fluid carried with a co-solvent into the chamber to modify the plurality of defects.