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US 2014/0193959 A1Published application
FinFET Body Contact and Method of Making Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Hsiung Lo, Jam-Wem Lee, Wun-Jie Lin, Jen-Chou Tseng
Life of this patent
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Abstract
A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.
Claims20
A method of forming a semiconductor structure, the method comprising:
- forming a semiconductor fin on a substrate;
- forming a first gate structure on a top surface and sidewalls of the semiconductor fin;
- forming a second gate structure on the top surface and sidewalls of the semiconductor fin, the second gate structure being laterally spaced from the first gate structure;
- forming a third gate structure on the top surface and sidewalls of the semiconductor fin, the third gate structure being laterally spaced form the first gate structure in a direction opposite from the second gate structure;
- forming a first source/drain region in the semiconductor fin, the first source/drain region being laterally between the first gate structure and the second gate structure;
- forming a second source/drain region in the semiconductor fin, the second source/drain region being laterally between the first gate structure and the third gate structure;
- and
- forming a first body contact in the semiconductor fin, the first body contact being laterally spaced from first source/drain region, the second gate structure being laterally between the first source/drain region and the first body contact.
5 more elements
A method comprising:
- forming a fin extending from a substrate;
- forming a first gate and a second gate over the fin;
- forming a first source/drain region in the fin between the first and second gates;
- and
- forming a first body contact in the fin, the second gate partially overlapping the first body contact.
2 more elements
A method comprising:
- forming a semiconductor fin raised above a substrate;
- forming a first active gate over the semiconductor fin;
- forming a first dummy gate over the semiconductor fin;
- forming a first source/drain region in the semiconductor fin between the first active gate and the first dummy gate, the first source/drain region being adjacent a first side of the first dummy gate;
- and
- forming a first body contact in the semiconductor fin adjacent a second side of the first dummy gate, the second side being opposite the first side.
3 more elements
Dependencies are inferred from the claim text.