Back to results
US 2014/0193955 A1Published application
Hybrid Fin Field-Effect Transistor Structures and Related Methods
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMatthew T. Currie
Life of this patent
Estimating the term…
Abstract
Semiconductor-on-insulator structures facilitate the fabrication of devices, including MOSFETs that are at least partially depleted during operation and FinFETs including bilayer fins and/or crystalline oxide.
Claims20
A method for forming a structure, the method comprising:
- providing a substrate having an insulator layer disposed thereon, and a first semiconductor layer disposed in contact with the insulator layer;
- and
- forming a fin field-effect transistor on the substrate by:
- patterning the first semiconductor layer to define a source region, a drain region, and at least one fin disposed between the source and the drain regions,
- forming a second semiconductor layer along a sidewall of the fin, the second semiconductor layer being a same material as the first semiconductor layer,
- forming a gate dielectric layer at least a portion of which is disposed over the fin, and
- forming a gate over the gate dielectric layer disposed over the fin.
4 more elements
A method comprising:
- providing a substrate comprising a first semiconductor material;
- patterning the first semiconductor material to form a fin;
- forming a semiconductor layer of a second semiconductor material along a sidewall of the fin;
- forming a gate dielectric layer at least a portion of which is disposed over the fin;
- and
- forming a gate over the gate dielectric layer disposed over the fin.
3 more elements
Dependencies are inferred from the claim text.