Collections of laterally crystallized semiconductor islands for use in thin film transistors

A method of manufacturing display devices comprised of a plurality of thin films transistors (TFTs) on a substrate, the method comprising the steps of:

• (a) fabricating the plurality of thin film transistors (TFTs) on the substrate, said TFTs spaced apart from each other and each including a channel region that has a crystalline microstructure and a direction along which a channel current flows;
• (b) wherein the channel region of each of the plurality of TFTs includes a plurality of crystalline stripes, each spanning the length of the channel region along its channel direction, and wherein each crystalline stripe of the plurality of stripes is physically disconnected from and crystallographically uncorrelated with other stripes of the plurality of stripes in that channel region or in the channel regions of adjacent TFTs;
• (c) wherein at least one crystalline stripe contains a crystallographic grain that spans the length of the channel region along its channel direction, and wherein the at least one crystallographic grain is physically disconnected from and crystallographically uncorrelated with at least another crystallographic grain in that channel region or the plurality of stripes in the channel regions of adjacent TFTs.