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AssigneesYonsei University, University—Industry Foundation (Uif), Samsung Electronics Co., Ltd.
InventorsMi-Jeong KIM, In Taek HAN, June HUH, Seong-Jun Jeong, Haeng Deog KOH, Youn Jung PARK
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A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ( n + 1 ) ] 1 3 ≤ r 1 - r 2 W ≤ 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ( n - 1 ) ] 1 3 . Inequation 1
A method of patterning a block copolymer layer, the method comprising:
A polymeric structure comprising:
A trench-patterned structure having a nano-sized pattern including a 90-degree bending portion, wherein the structure comprises a polymer, a metal, a metal oxide, a metal nitride, or a combination thereof, and the nano-sized pattern is transferred from a block copolymer nanopattern that is formed by directing self-assembly of a block copolymer on a substrate according to a guide pattern to form n/2 discrete domains and selectively removing some of the discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex has a first curvature radius r1, the inner apex has a second curvature radius r2, and a width of the block copolymer patterning area W, the first curvature radius r1, and the second curvature radius r2, satisfy Inequation 1:
Dependencies are inferred from the claim text.