US 2014/0192839 A1 · Method and Apparatus for Measuring Temperature of Semiconductor Layer

Abstract

A method and apparatus are provided to directly and accurately detect a temperature of a semiconductor layer at the time of depositing and film-forming the semiconductor layer. First wavelength laser light having light transmissivity attenuated in a first temperature range and second wavelength laser light having light transmissivity attenuated in a second temperature range are applied to the semiconductor layer. A light receiving unit receives light passing through the semiconductor layer. An attenuation range of the laser light transmissivity is detected when the temperature of the semiconductor layer is increased and the detection light quantity of the first wavelength laser light is attenuated. As the temperature continues to increase and the detection light quantity of the second wavelength laser light exceeds an attenuation start point, the temperature of the semiconductor layer is calculated based on a detection light quantity at a predetermined measurement time and the attenuation range.

Claims14

Dependent claims

A temperature measuring method for measuring a temperature of a semiconductor layer during deposition in a chamber, comprising

using a first wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer rises and reaches a first range and a second wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer reaches a second range that is higher than the first range,
applying the first wavelength light and the second wavelength light to the semiconductor layer along a common path and detecting quantities of the first wavelength light and the second wavelength light with a light detecting device facing the semiconductor layer, and
when the detected quantity of the second wavelength light starts to decrease after the temperature of the semiconductor layer exceeds the first range during which the detected quantity of the first wavelength light decreases, calculating a current temperature of the semiconductor layer within the second range from a current detected quantity of the second wavelength light and a decrease in the detected quantity of the first wavelength light.

A temperature measuring method for measuring a temperature of a semiconductor layer during deposition in a chamber, comprising

using a first wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer rises and reaches a first range and a second wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer reaches a second range that is higher than the first range,
applying the first wavelength light and the second wavelength light to the semiconductor layer along a common path and detecting quantities of the first wavelength light and the second wavelength light with a light detecting device facing the semiconductor layer, and
when a change in the detected quantity of the second wavelength light is observed by monitoring the detected quantity of the second wavelength light after the temperature of the semiconductor layer exceeds the first range during which the detected quantity of the first wavelength light decreases, determining whether the change in the detected quantity of the second wavelength light is due to a change in the temperature of the semiconductor layer or other factors based on a current change in the detected quantity of the first wavelength light.

A temperature measuring apparatus for measuring a temperature of a semiconductor layer during deposition in a chamber, comprising

a light emitting device for applying a first wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer rises and reaches a first range and a second wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer reaches a second range that is higher than the first range,
a light detecting device for detecting the first wavelength light and the second wavelength light,
the light emitting device and the light detecting device facing a surface of the semiconductor layer, enabling the first wavelength light and the second wavelength light to be applied to the surface along a common path and a diffuse reflected light passing through the semiconductor layer and a diffuse reflected light reflected from the surface to be detected by the light detecting device, and
a controller for calculating the temperature of the semiconductor layer from quantities of the first wavelength light and the second wavelength light detected by the light detecting device,
wherein when the detected quantity of the second wavelength light starts to decrease after the temperature of the semiconductor layer exceeds the first range during which the detected quantity of the first wavelength light decreases, the controller calculates a current temperature of the semiconductor layer within the second range from a current detected quantity of the second wavelength light and a decrease in the detected quantity of the first wavelength light.

2 more elements

Dependencies are inferred from the claim text.

Method and Apparatus for Measuring Temperature of Semiconductor Layer

Life of this patent

Method and Apparatus for Measuring Temperature of Semiconductor Layer

Life of this patent

Abstract

Claims14