Defective memory column replacement with load isolation
AssigneeInternational Business Machines Corporation
InventorsSilke Penth, Raphael Polig, Tobias Werner, Alexander Woerner
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Abstract
Exemplary embodiments of the present invention disclose a method and system for substituting a group of memory cells for a defective group of memory cells in a memory. In a step, an exemplary embodiment replaces a signal path to a group of defective memory cells with a signal path to a redundant group of memory cells. In another step, an exemplary embodiment isolates the signal path to the redundant group of memory cells from a load imposed by the signal path to the replaced group of defective memory cells.
Claims20
A system for substituting a group of memory cells in a memory, the system comprising:
- one or more groups of memory cells;
- one or more redundant groups of memory cells;
- circuit to replace a signal path to a defective group of memory cells with a signal path to a redundant group of memory cells;
- circuit to isolate the signal path to the redundant group of memory cells from a load imposed by the signal path to the defective group of memory cells that has been replaced;
- wherein the system is operable to:
- replace a signal path to a group of defective memory cells with a signal path to a redundant group of memory cells;
- and
- isolate the signal path to the redundant group of memory cells from a load imposed by the replaced signal path to the group of defective memory cells.
A method for substituting a group of memory cells in a memory, the method comprising the steps of:
- replacing a signal path to a group of defective memory cells with a signal path to a redundant group of memory cells;
- and
- isolating the signal path to the redundant group of memory cells from a load imposed by the replaced signal path to the group of defective memory cells.
Dependencies are inferred from the claim text.