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AssigneeShanghai Institute of Microsystem and Information Technology, Chinese Academy
InventorsLiangcai Wu, Min Zhu, Zhitang Song, Feng Rao, Cheng Peng, Xilin Zhou, Kun Ren, Songlin Feng
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The present invention relates to an Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material of the present invention is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100-x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. In a crystallization process of an Sb—Te phase-change material in the prior art, gain growth dominates, so the phase change rate is high, but the retention cannot meet industrial requirements.
An Sb—Te—Ti phase-change memory material for a phase-change memory, formed by doping an Sb—Te phase-change memory material with Ti, and having a chemical formula of SbxTeyTi100-x-y, wherein 0<x<80, and 0<y<100-x.
Dependencies are inferred from the claim text.