High capacity low cost multi-state magnetic memory
AssigneeAvalanche Technology, Inc.
InventorParviz Keshtbod
Life of this patent
Estimating the term…
Abstract
A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.
Claims17
A method of writing to a magnetic memory cell comprising:
- setting a first switch and a second switch, the first and second switches coupled to a magnetic memory cell, the magnetic memory cell including a first and a second magnetic memory elements coupled to each other in series, the setting of the first and second switches causing the first and second magnetic elements to switch states defining a state of the magnetic memory cell;
- programming the magnetic memory cell to an intermediate state by setting one or both of the first and second switches;
- and
- programming the magnetic memory cell by setting one or both of the first and second switches to a final state after programming it to the intermediate state.
The method of claim, further including sensing the state of the magnetic memory cell before the programming to the final state and based on the sensing, selectively skipping the intermediate state.
A write circuit for programming a magnetic memory cell including more than one magnetic memory element comprising:
- a first switch and a second switch;
- a magnetic memory cell including a first magnetic memory element and a second magnetic memory element, the magnetic memory cell coupled to the first and second switches;
- a first circuit coupled to the first switch;
- a second circuit coupled to the first switch, the magnetic memory cell being at a state based on the position of the first and second switches, the writing circuit operable to:
- program the magnetic memory cell to an intermediate state by setting one or both of the first and second switches;
- and
- program the magnetic memory cell by setting one or both of the first and second switches to a final state after programming the magnetic memory cell to the intermediate state.
Dependencies are inferred from the claim text.