Nonvolatile Memory Device and Read Method Thereof

A nonvolatile memory device, comprising:

• a main area including a first main cell programmed to have a first resistance level corresponding to first data and a second main cell programmed to have a second resistance level corresponding to second data;
• a reference area including a reference cell programmed to have the first resistance level;
• a reference sense amplifier circuit configured to read a resistance value of the reference cell under a first read condition at a read operation and to generate a reference voltage based on the resistance value of the reference cell read;
• and
• a main sense amplifier circuit configured to read data stored at the first and second main cells using the reference voltage under a second read condition that is different from the first read condition,
• wherein the first and second main cells and the reference cell share a same word line.

A read method of a nonvolatile memory device including a main area including main cells connected to word lines and main bit lines;

• and a reference area including reference cells connected to the word lines and reference bit lines and programmed using a same write condition as that of the main area, the read method comprising:
• shifting data stored at the reference area with a weighting scheme to read the shifted data;
• generating a reference voltage based on the read data;
• and
• reading data stored at the main area using the reference voltage.