Pixel circuit, active sensing array, sensing device and driving method thereof

A driving method of a pixel circuit, wherein the pixel circuit comprises a sensing transistor, a reset transistor, and a storage capacitor, the driving method comprising:

• electrically connecting the pixel circuit through a data line, a first scan line, and a second scan line, wherein the sensing transistor is electrically connected to a sensing element and the data line, the reset transistor is electrically connected to the first scan line and the sensing transistor, and the storage capacitor is electrically connected to the sensing transistor and the second scan line;
• during a compensation period, providing a first scanning pulse to the first scan line to turn on the reset transistor;
• connecting the sensing transistor into a diode configuration through the turned-on reset transistor;
• and
• switching a level of the data line, so that the storage capacitor charges and discharges to a threshold voltage of the sensing transistor through the sensing transistor having the diode configuration.

An active sensing array, comprising:

• M pixel rows, corresponding to M first scan lines, M second scan lines, and a plurality of data lines, wherein an ith pixel row is electrically connected to an ith first scan line, an ith second scan line, and the data lines, M is a positive integer, i is an integer, 1≦i≦M, the ith pixel row comprises a plurality of pixel circuits, and each of the pixel circuits of the ith pixel row comprises:
• a sensing transistor, electrically connected to a sensing element and one of the data lines;
• a reset transistor, electrically connected to the ith first scan line and the sensing transistor;
• and
• a storage capacitor, electrically connected to the sensing transistor and the ith second scan line,
• wherein during a compensation period, the reset transistors of the 1st to the Nth pixel rows are turned on in response to N first scanning pulses from the 1st to the Nth first scan lines, so that the sensing transistors of the 1st to the Nth pixel rows are respectively connected into a diode configuration, wherein N is an integer not greater than M, and during the compensation period, the storage capacitors of the 1st to the Nth pixel rows charge and discharge to threshold voltages of the sensing transistors having the diode configuration of the 1st to the Nth pixel rows through the sensing transistors having the diode configuration in response to switching of levels of the data lines.

A driving method of an active sensing array, wherein the active sensing array comprises M pixel rows, an ith pixel row comprises a plurality of pixel circuits, and each of the pixel circuits comprises a sensing transistor, a reset transistor, and a storage capacitor, M is a positive integer, i is an integer, and 1≦i≦M, the driving method comprising:

• electrically connecting the M pixel rows through M first scan lines, M second scan lines, and a plurality of data lines, wherein the ith pixel row is electrically connected to an ith first scan line, an ith second scan line, and the data lines;
• during a compensation period, providing N first scanning pulses to the 1st to the Nth first scan lines to turn on the reset transistors of the 1st to the Nth pixel rows, wherein N is an integer not greater than M;
• respectively connecting the sensing transistors of the 1st to the Nth pixel rows into a diode configuration through the turned-on reset transistors of the 1st to the Nth pixel rows;
• and
• switching levels of the data lines, so that the storage capacitors of the 1st to the Nth pixel rows charge and discharge to threshold voltages of the sensing transistors having the diode configuration through the sensing transistors having the diode configuration.

A sensing device, comprising:

• at least one sensing element;
• and
• an active sensing array, comprising at least one pixel circuit, wherein the at least one pixel circuit is electrically connected to a first scan line, a second scan line, and a data line and comprises:
• a sensing transistor, electrically connected to the at least one sensing element and the data line;
• a reset transistor, electrically connected to the first scan line and the sensing transistor;
• and
• a storage capacitor, electrically connected to the sensing transistor and the second scan line,
• wherein during a compensation period, the reset transistor is turned on in response to a first scanning pulse from the first scan line, so that the sensing transistor is connected into a diode configuration, and the storage capacitor charges and discharges to a threshold voltage of the sensing transistor through the sensing transistor having the diode configuration in response to switching of a level of the data line.