Driving circuit of a semiconductor display device and the semiconductor display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsJun KOYAMA, Shunpei YAMAZAKI
Life of this patent
Estimating the term…
Abstract
There are provided a driving circuit of a semiconductor display device which can obtain an excellent picture without picture blur (display unevenness) and with high fineness/high resolution, and the semiconductor display device. A buffer circuit used in the driving circuit of the semiconductor display device is constituted by a plurality of TFTs each having a small channel width, and a plurality of such buffer circuits are connected in parallel with each other.
Claims23
(canceled)
A display device, comprising:
- a gate signal line side driving circuit including a shift register circuit,
- wherein the gate signal line side driving circuit includes a buffer circuit electrically connected with the shift register circuit, the buffer circuit including a plurality of inverters,
- wherein at least one of the plurality of inverters comprises a plurality of n-channel thin film transistors and at least one p-channel thin film transistor, and
- wherein each of the plurality of n-channel thin film transistors is connected in parallel with each other.
A display device, comprising:
- a gate signal line side driving circuit including a shift register circuit,
- wherein the gate signal line side driving circuit includes a buffer circuit electrically connected with the shift register circuit, the buffer circuit including a plurality of inverters,
- wherein at least one of the plurality of inverters comprises a plurality of p-channel thin film transistors and at least one n-channel thin film transistor, and
- wherein each of the plurality of p-channel thin film transistors is connected in parallel with each other.
A display device, comprising:
- a pixel matrix circuit;
- and
- a first gate signal line side driving circuit and a second gate signal line side driver circuit, wherein the pixel matrix circuit is located between the first gate signal line side driving circuit and the second gate signal line side driver circuit, each of the first gate signal line side driving circuit and the second gate signal line side driver circuit including a shift register circuit and a buffer circuit electrically connected with the shift register circuit, the buffer circuit comprising an inverter,
- wherein the inverter comprises a plurality of n-channel thin film transistors and at least one p-channel thin film transistor,
- wherein each of the plurality of n-channel thin film transistors is connected in parallel with each other, and
- wherein a channel region of the plurality of n-channel thin film transistors comprises crystalline silicon.
A display device, comprising:
- a pixel matrix circuit;
- and
- a first gate signal line side driving circuit and a second gate signal line side driver circuit, wherein the pixel matrix circuit is located between the first gate signal line side driving circuit and the second gate signal line side driver circuit, each of the first gate signal line side driving circuit and the second gate signal line side driver circuit including a shift register circuit and a buffer circuit electrically connected with the shift register circuit, the buffer circuit comprising an inverter,
- wherein the inverter comprises a plurality of p-channel thin film transistors and at least one n-channel thin film transistor,
- wherein each of the plurality of p-channel thin film transistors is connected in parallel with each other, and
- wherein a channel region of the plurality of p-channel thin film transistors comprises crystalline silicon.
Dependencies are inferred from the claim text.