Radio frequency filter and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSang Uk SON, Ho Soo PARK, Jea Shik SHIN, Duck Hwan KIM, Chul Soo KIM, In Sang SONG, Moon Chul LEE
Life of this patent
Estimating the term…
Abstract
A radio frequency filter and a manufacturing method thereof are provided. A radio frequency filter includes bulk acoustic wave resonators (BAWRs), the BAWRs including first BAWRs connected in series, second BAWRs connected in parallel, or a combination thereof.
Claims20
A radio frequency filter comprising bulk acoustic wave resonators (BAWRs), the BAWRs comprising first BAWRs connected in series, second BAWRs connected in parallel, or a combination thereof.
A method for manufacturing a radio frequency filter, the method comprising:
- forming a silicon oxide film, a silicon nitride film, and a sacrificial layer above a substrate in that order;
- patterning the sacrificial layer according to a shape of an air cavity;
- forming a silicon oxide film, a silicon nitride film, a first conductive layer above the patterned sacrificial layer in that order;
- forming a first electrode from the first conductive layer;
- forming a piezoelectric layer and a second conductive layer above the first electrode;
- forming a second electrode from the second conductive layer, based on at least one of a serial connection, a parallel connection, or a combination thereof of bulk acoustic wave resonators (BAWRs);
- forming a protection layer on the second electrode;
- generating the air cavity by removing the sacrificial layer;
- and
- generating a via hole by etching the substrate.
A method for manufacturing a radio frequency filter, the method comprising:
- forming a sacrificial layer on a first substrate;
- forming a first electrode, a piezoelectric layer, a temperature coefficient of frequency (TCF) compensation layer, and a second electrode above the sacrificial layer;
- removing the sacrificial layer to generate an air cavity,
- wherein the TCF compensation layer is formed either between the first electrode and the piezoelectric layer or between the piezoelectric layer and the second electrode.
Dependencies are inferred from the claim text.