Semiconductor device and manufacturing method and operating method for the same

A method for manufacturing semiconductor device, comprising:

• providing a substrate having a first type conductivity;
• forming a deep well having a second type conductivity opposite to the first type conductivity in the substrate, wherein the deep well extends down from a surface of the substrate;
• forming a first well having at least one of the first type conductivity and the second type conductivity in the deep well, wherein the first well extends down from the surface of the substrate;
• forming a high threshold voltage channel region having the second type conductivity, wherein the high threshold voltage channel region is formed in the first well and extends down from the surface of the substrate;
• forming a first doped electrode region having the first type conductivity in the deep well, wherein the first doped electrode region is in a region without the high threshold voltage channel region in the first well;
• forming a second doped electrode region having the second type conductivity in the deep well, wherein the second doped electrode region is adjacent to the first doped electrode region, and parts of the second doped electrode region are covered by the high threshold voltage channel region;
• wherein an output current provided by the semiconductor device is controlled by adjusting an area of the second doped electrode region covered by the high threshold voltage channel region.

An operating method for a semiconductor device, wherein the semiconductor device comprises:

• a substrate having a first type conductivity;
• a deep well formed in the substrate and having a second type conductivity opposite to the first type conductivity;
• a first well formed in the deep well and having at least one of the first type conductivity and the second type conductivity;
• a first doped electrode region formed in the first well and having the first type conductivity;
• a second doped electrode region having the second type conductivity, wherein the second dope electrode region is formed in the first well and adjacent to the first doped electrode region;
• a third doped electrode region formed within the deep well, wherein the third doped electrode region extends down from the surface of the substrate, being spaced apart from the second doped electrode region with a distance and having the second conductive type;
• a high threshold voltage channel region having the second type conductivity, extending down from the surface of the substrate and formed in the first well, the high threshold voltage channel covers parts of the surface of the second doped electrode,
• wherein a surface of the high threshold voltage channel having a first side, a second side opposite to the first side, a third side and a fourth side opposite to the third side, the first side and the second side are adjoined to the third side and the fourth side;
• the operating method for the semiconductor device comprises:
• applying a voltage to the gate structure;
• coupling the first doped electrode region to a first electrode, wherein the first electrode is one of an anode and a cathode;
• and
• coupling the third doped electrode region to a second electrode, wherein the second electrode is another of the anode and the cathode.