Poling treatment method, plasma poling device, piezoelectric body and manufacturing method thereof, film forming device and etching device, and lamp annealing device

A plasma poling device, comprising:

• a poling chamber;
• a holding electrode which is disposed in said poling chamber and holds a substrate to be poled;
• an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode;
• a power source electrically connected to one electrode of said holding electrode and said opposite electrode;
• a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode;
• a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode;
• and
• a control unit controlling said power source, said gas supply mechanism, and said temperature control mechanism, wherein
• said control unit controls said power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than a temperature at which a residual polarization value in a hysteresis curve of said substrate to be poled becomes 0%, and to form a plasma at a position facing said substrate to be poled and apply the poling treatment to said substrate to be poled.

A plasma poling device, comprising:

• a poling chamber;
• a holding electrode which is disposed in said poling chamber and holds a substrate to be poled;
• an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode;
• a first power source and a ground potential connected to said holding electrode via a first switch;
• a second power source and said ground potential connected to said opposite electrode via a second switch;
• a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode;
• a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode;
• and
• a control unit controlling said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism, wherein
• said first switch switches from a first state in which said holding electrode and said first power source are electrically connected to each other, to a second state in which said holding electrode and said ground potential are electrically connected to each other,
• said second switch switches from a third state in which said opposite electrode and said ground potential are electrically connected to each other, to a fourth state in which said opposite electrode and said second power source are electrically connected to each other, and
• said control unit controls said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than a temperature at which a residual polarization value in a hysteresis curve of said substrate to be poled becomes 0%, and to form a plasma at a position facing said substrate to be poled and apply a poling treatment to said substrate to be poled, in said first state and said third state or in said second state and said fourth state.

A plasma poling device, comprising:

• a poling chamber;
• a holding electrode which is disposed in said poling chamber and holds a substrate to be poled;
• an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode;
• a power source electrically connected to one electrode of said holding electrode and said opposite electrode;
• a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode;
• a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode;
• and
• a control unit controlling said power source, said gas supply mechanism, and said temperature control mechanism, wherein
• said control unit controls said power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than a Curie temperature, and to form a plasma at a position facing said substrate to be poled and apply a poling treatment to said substrate to be poled.

A plasma poling device, comprising:

• a poling chamber;
• a holding electrode which is disposed in said poling chamber and holds a substrate to be poled;
• an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode;
• a first power source and a ground potential connected to said holding electrode via a first switch;
• a second power source and said ground potential connected to said opposite electrode via a second switch;
• a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode;
• a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode;
• and
• a control unit controlling said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism, wherein
• said first switch switches from a first state in which said holding electrode and said first power source are electrically connected to each other, to a second state in which said holding electrode and said ground potential are electrically connected to each other,
• said second switch switches from a third state in which said opposite electrode and said ground potential are electrically connected to each other, to a fourth state in which said opposite electrode and said second power source are electrically connected to each other, and
• said control unit controls said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than a Curie temperature, and to form a plasma at a position facing said substrate to be poled and apply a poling treatment to said substrate to be poled, in said first state and said third state or in said second state and said fourth state.

A plasma poling device, comprising:

• a poling chamber;
• a holding electrode which is disposed in said poling chamber and holds a substrate to be poled;
• an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode;
• a power source electrically connected to one electrode of said holding electrode and said opposite electrode;
• a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode;
• a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode;
• and
• a control unit controlling said power source, said gas supply mechanism, and said temperature control mechanism, wherein
• said control unit controls said power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than 100° C., and to form a plasma at a position facing said substrate to be poled and apply a poling treatment to said substrate to be poled.

A plasma poling device, comprising:

• a poling chamber;
• a holding electrode which is disposed in said poling chamber and holds a substrate to be poled;
• an opposite electrode which is disposed in said poling chamber and disposed facing said substrate to be poled held on said holding electrode;
• a first power source and a ground potential connected to said holding electrode via a first switch;
• a second power source and said ground potential connected to said opposite electrode via a second switch;
• a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode;
• a temperature control mechanism controlling a temperature of said substrate to be poled held on said holding electrode;
• and
• a control unit controlling said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism, wherein
• said first switch switches from a first state in which said holding electrode and said first power source are electrically connected to each other, to a second state in which said holding electrode and said ground potential are electrically connected to each other,
• said second switch switches from a third state in which said opposite electrode and said ground potential are electrically connected to each other, to a fourth state in which said opposite electrode and said second power source are electrically connected to each other, and
• said control unit controls said first power source, said second power source, said gas supply mechanism, and said temperature control mechanism so as to set a temperature of said substrate to be poled to a first temperature not lower than 100° C., and to form a plasma at a position facing said substrate to be poled and apply a poling treatment to said substrate to be poled, in said first state and said third state or in said second state and said fourth state.

A lamp annealing device, comprising:

• a chamber;
• a holding electrode which is disposed in said chamber and holds a substrate to be poled including any film of a dielectric material film, an insulating material film, a piezoelectric material film, a pyroelectric material film, and a ferroelectric material film;
• an opposite electrode which is disposed in said chamber and disposed facing said substrate to be poled held on said holding electrode;
• a lamp heater irradiating said substrate to be poled with lamp light;
• a power source electrically connected to one electrode of said holding electrode and said opposite electrode;
• a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode;
• and
• a control unit controlling said lamp heater, said power source, and said gas supply mechanism.

A lamp annealing device, comprising:

• a chamber;
• a holding electrode which is disposed in said chamber and holds a substrate to be poled including any film of a dielectric material film, an insulating material film, a piezoelectric material film, a pyroelectric material film, and a ferroelectric material film;
• an opposite electrode which is disposed in said chamber and disposed facing said substrate to be poled held on said holding electrode;
• a lamp heater irradiating said substrate to be poled with lamp light;
• a first power source and a ground potential connected to said holding electrode via a first switch;
• a second power source and said ground potential connected to said opposite electrode via a second switch;
• a gas supply mechanism supplying a plasma forming gas to a space between said opposite electrode and said holding electrode;
• and
• a control unit controlling said lamp heater, said first power source, said second power source, and said gas supply mechanism, wherein
• said first switch switches from a first state in which said holding electrode and said first power source are electrically connected to each other, to a second state in which said holding electrode and said ground potential are electrically connected to each other,
• said second switch switches from a third state in which said opposite electrode and said ground potential are electrically connected to each other, to a fourth state in which said opposite electrode and said second power source are electrically connected to each other.

A manufacturing method of a piezoelectric body, comprising the steps of:

• forming a piezoelectric material film on a substrate;
• irradiating said piezoelectric material film with lamp light from a lamp heater, thereby heating said piezoelectric material film to a crystallization temperature to crystallize the film;
• and
• forming a plasma at a position facing said piezoelectric material film and applying a poling treatment to said piezoelectric material film at a first temperature, wherein
• said first temperature is lower than said crystallization temperature and also not lower than a temperature at which a residual polarization value in a hysteresis curve of said piezoelectric material film becomes 0%.

A manufacturing method of a piezoelectric body, comprising the steps of:

• forming a piezoelectric material film on a substrate;
• irradiating said piezoelectric material film with lamp light from a lamp heater, thereby heating said piezoelectric material film to a crystallization temperature to crystallize the film;
• and
• forming a plasma at a position facing said piezoelectric material film and applying a poling treatment to said piezoelectric material film at a first temperature, wherein
• said first temperature is lower than said crystallization temperature and also not lower than a Curie temperature.

A manufacturing method of a piezoelectric body, comprising the steps of:

• forming a piezoelectric material film on a substrate;
• irradiating said piezoelectric material film with lamp light from a lamp heater, thereby heating said piezoelectric material film to a crystallization temperature to crystallize the film;
• and
• forming a plasma at a position facing said piezoelectric material film and applying a poling treatment to said piezoelectric material film at a first temperature, wherein
• said first temperature is lower than said crystallization temperature and also not lower than 100° C.