Nanocomposites with high thermoelectric figures of merit
AssigneesThe Trustees of Boston College, Massachusetts Institute of Technology
InventorsGang Chen, Mildred Dresselhaus, Zhifeng Ren
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AssigneesThe Trustees of Boston College, Massachusetts Institute of Technology
InventorsGang Chen, Mildred Dresselhaus, Zhifeng Ren
Estimating the term…
The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5 kBT, wherein kB is the Boltzman constant and T is an average temperature of said nanocomposite composition.
1-13. (canceled)
A method of synthesizing a thermoelectric nanocomposite semiconductor composition, comprising
A method of synthesizing a thermoelectric nanocomposite semiconductor composition, comprising
A method of generating a thermoelectric nanocomposite semiconductor composition, comprising:
Dependencies are inferred from the claim text.