Semiconductor Device and Method for Fabricating the Same

A semiconductor device comprising:

• a substrate including a first surface and a second surface that are opposite each other;
• an isolation pattern on the first surface of the substrate;
• a circuit pattern on the first surface of the substrate;
• a pre-metal dielectric layer on the first surface of the substrate that at least partly covers the circuit pattern;
• a through-hole penetrating the pre-metal dielectric layer, the substrate and the isolation pattern;
• a through via contact in the through-hole, wherein a portion of the through via contact projects from the second surface of the substrate;
• a dielectric spacer layer between the substrate and the through via contact;
• a planarization layer on the dielectric spacer layer and the second surface of the substrate, the planarization layer including a first opening that exposes the through via contact;
• and
• a passivation layer on the planarization layer, the passivation layer including a second opening that exposes the through via contact.

A semiconductor device, comprising:

• a substrate having a first major surface and a second major surface opposite the first surface;
• a plurality of through-holes that each extend through the substrate from the first major surface to the second major surface;
• a plurality of through via contacts that are positioned in respective ones of the plurality of through-holes, wherein a first end of each through via contact projects from the second major surface of the substrate;
• a planarization layer on the second major surface of the substrate;
• and
• a passivation layer on the planarization layer opposite the substrate, the passivation layer being coplanar with the first end of each through via contact.