Method for producing a semiconductor device comprising a conductor layer in the semiconductor body and semiconductor body

A method for the production of a semiconductor component, wherein

• a semiconductor body is provided with a dielectric at an upper side and at an underside opposite the upper side and with metal planes located at least on one side of the semiconductor body in the dielectric;
• a cutout is formed in the dielectric present at the upper side and in the semiconductor body, so that the cutout penetrates the semiconductor body and is limited by the dielectric present at the underside;
• a conductor layer is applied and structured in such a manner that it screens the semiconductor body toward the cutout and is electrically conductively connected to at least one of the metal planes;
• the conductor layer in the cutout is covered with a spacer formed from dielectric material;
• and
• a metal layer is applied and structured, so that the metal layer is present within the cutout and electrically insulated from the conductor layer by the spacer, and is outside the cutout electrically conductively connected to at least one of the metal planes.

A semiconductor device, comprising

• a semiconductor body;
• at least one metal plane on or above the semiconductor body;
• a cutout completely penetrating the semiconductor body between an upper side and an underside opposite the upper side, so that the semiconductor body has a surface formed by the cutout;
• a conductor layer, which is electrically conductively connected to one of the metal planes, electrically screening the semiconductor body from the cutout;
• and
• a metal layer arranged in the cutout);
• characterized in that
• the conductor layer is arranged directly on the surface of the semiconductor body formed by the cutout;
• and
• the metal layer is electrically insulated from the conductor layer by a spacer formed from dielectric material.