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US 2014/0191410 A1Published application
Damage monitor structure for through-silicon via (tsv) arrays
OwnerGerald S. Leatherman, Christopher C. Peltoinventors
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Abstract
Described herein are techniques related to techniques for monitoring damage to circuitry or structure neighboring one or more through-silicon vias (TSVs) caused by TSV-related processing. Additionally, techniques for confining diffusion of moisture or chemical from one or more TSVs during TSV-related processing are also described. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Claims39
1-38. (canceled)
A device comprising:
- a multi-layer semiconductor structure;
- one or more through-silicon vias (TSVs) traversing through the multi-layer semiconductor structure;
- and
- an electrically conductive chain embedded in the multi-layer semiconductor structure and around the one or more TSVs.
1 more element
A device comprising:
- a multi-layer semiconductor structure;
- one or more through-silicon vias (TSVs) traversing through the multi-layer semiconductor structure;
- and
- a guard ring embedded in the multi-layer semiconductor structure and encompassing the one or more TSVs.
1 more element
A method comprising:
- providing a multi-layer semiconductor structure;
- forming an electrically conductive chain that is embedded in the multi-layer semiconductor structure and around a through-silicon via region of the multi-layer semiconductor structure;
- and
- forming one or more through-silicon vias (TSVs) that traverse through the through-silicon via region of the multi-layer semiconductor structure.
1 more element
A method comprising:
- providing a multi-layer semiconductor structure;
- forming a guard ring that is embedded in the multi-layer semiconductor structure and encompassing a through-silicon via region of the multi-layer semiconductor structure;
- and
- forming one or more through-silicon vias (TSVs) that traverse through the through-silicon via region of the multi-layer semiconductor structure.
1 more element
Dependencies are inferred from the claim text.