Backside metal ground plane with improved metal adhesion and design structures

A method comprising:

• forming a plurality of through silicon vias (TSVs) in a substrate, comprising:
• forming openings partially within the substrate;
• filling the openings with a metal;
• and
• thinning the substrate to expose a backside of the metal within the via, such that the metal via extends entirely through the substrate, wherein the thinning process results in an oxide layer formed on a backside of the substrate;
• and
• forming a backside metal on the oxide layer such that the backside metal is in direct contact with the plurality of TSVs and the oxide layer.

A structure, comprising:

• a substrate comprising at least one through silicon via extending entirely through the substrate;
• an oxide layer on a backside of the substrate;
• and
• a metalized ground plane on a backside of the substrate, directly in contact with metal of the at least one through silicon via and the oxide layer on the backside.

A method in a computer-aided design system for generating a functional design model of a structure with a backside metal, the method comprising:

• generating a functional representation of a substrate comprising at least one through silicon via extending entirely through the substrate;
• generating a functional representation of an oxide layer on a backside of the substrate;
• and
• generating a functional representation of a metalized ground plane on a backside of the substrate, directly in contact with metal of the at least one through silicon via and the oxide layer on the backside.