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US 2014/0191407 A1Published application
Dielectric posts in metal layers
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsFan ZHANG, Wei SHAO, Juan Boon TAN, Yeow Kheng LIM, Mahesh BHATKAR, Soh Yun SIAH
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Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate comprises a plurality of metal layers. The semiconductor device also includes dielectric posts disposed in the metal layers. The density of the dielectric posts in the metal layers is equal to about 15-25%.
Claims20
A semiconductor device comprising:
- a substrate comprises a plurality of metal layers;
- and
- dielectric posts disposed in the metal layers, wherein the density of the dielectric posts in the metal layers is equal to about 15-25%.
A semiconductor device comprising:
- a substrate comprises a plurality of metal levels having metal layers disposed in a crack stop region;
- and
- dielectric posts disposed in the metal layers, wherein the density of the dielectric posts in the metal layers is equal to about 15-25%.
A semiconductor device comprising:
- a substrate prepared with circuit components formed thereon, the substrate having a crack-stop region disposed in a peripheral region of the circuit components;
- a plurality of metal layers disposed in the crack-stop region;
- and
- dielectric posts disposed in the metal layers, wherein the density of the dielectric posts in the metal layers is equal to about 15-25%.
1 more element
Dependencies are inferred from the claim text.