Local interconnect structure and fabrication method

A method of making a local interconnect structure, comprising:

• providing a semiconductor substrate;
• forming a dielectric layer on the semiconductor substrate;
• forming a first film layer patterned on the dielectric layer to define a region surrounded by a local interconnect structure to be formed and to expose a surface portion of the dielectric layer;
• forming a sidewall spacer surrounding the first film layer and on the exposed surface portion of the dielectric layer;
• patterning the sidewall spacer to define a position for forming the local interconnect structure to be formed;
• forming a second film layer on exposed surface portion of the dielectric layer, wherein the second film layer has a top surface substantially flushed with a top surface of the sidewall spacer;
• removing the patterned sidewall spacer to form a first opening;
• after forming the first opening, etching the dielectric layer to expose a surface of the semiconductor substrate to form a second opening through the dielectric layer;
• and
• filling the second opening with a conductive material to form the local interconnect structure.