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US 2014/0191402 A1Published application
Barrier Layer for Copper Interconnect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Hung Lin, Chi-Yu Chou, Kuei-Pin Lee, Chen-Kuang Lien, Yu-Chang Hsiao, Yao-Hsiang Liang, Yu-Min Chang
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Abstract
A device including a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a Ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the Ta layer and the dielectric layer.
Claims22
A device, comprising:
- a dielectric layer overlying a substrate;
- a conductive line with a sidewall in the dielectric layer;
- a Ta layer adjoining the sidewall of the conductive line;
- and
- a metal oxide between the Ta layer and the dielectric layer.
2 more elements
A device, comprising:
- a dielectric layer overlying a substrate;
- an opening in the dielectric layer;
- a metal-containing layer overlying the opening;
- a barrier layer overlying the metal-containing layer;
- a conductive layer in the opening;
- and
- a metal oxide barrier layer underlying the conductive layer.
4 more elements
A device, comprising:
- a dielectric layer overlying a substrate;
- a recess cavity in the dielectric layer;
- a CuMn layer overlying the recess cavity;
- a α phase tantalum layer overlying the CuMn layer within the recess cavity;
- a conductive layer overlying the α phase tantalum layer within the recess cavity;
- and
- a MnOx barrier layer underlying the conductive layer.
4 more elements
Dependencies are inferred from the claim text.