Semiconductor Devices and Methods of Manufacture Thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYing-Hsueh Chang Chien, Yu-Ming Lee, Man-Kit Leung, Chi-Ming Yang
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Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process.
Claims21
A method of manufacturing a semiconductor device, the method comprising:
- providing a workpiece including an insulating material layer disposed thereon, the insulating material layer including a trench formed therein;
- and
- forming a barrier layer on sidewalls of the trench using a surface modification process and a surface treatment process.
A method of manufacturing a semiconductor device, the method comprising:
- forming a conductive material over a workpiece;
- forming an insulating material layer over the conductive material;
- patterning the insulating material layer to form a trench and expose a portion of a top surface of the conductive material in the bottom of the trench;
- and
- forming a barrier layer on sidewalls of the trench using a surface modification process and a surface treatment process.
17-20. (canceled)
A method of manufacturing a semiconductor device, the method comprising:
- forming a trench in a dielectric layer, the trench including sidewalls defined by the dielectric layer and a bottom defined by an underlying conductive structure;
- performing a surface modification that selectively modifies the dielectric sidewalls without modifying the underlying conductive structure;
- and
- performing a surface treatment that selectively treats the modified dielectric sidewalls without treating the underlying conductive structure to form a barrier layer on the dielectric sidewalls.
Dependencies are inferred from the claim text.