Wiring material and semiconductor module using the same
AssigneeHitachi, Ltd.
InventorsTakashi Ando, Ryoichi Kajiwara, Hiroshi Hozoji
Life of this patent
Estimating the term…
Abstract
There is provided a wiring material including a core layer made of metal and a clad layer made of metal and a fiber in which the core layer is copper or an alloy containing copper and the clad layer is formed of copper or the alloy containing copper and the fiber having a thermal expansion coefficient lower than that of copper, the wiring material having a stacked structure in which at least one surface of the core layer is closely adhered to the clad layer, and the fiber in the clad layer is arranged so as to be parallel to the surface of the core layer.
Claims16
1-21. (canceled)
A wiring material, comprising:
- a core layer made of metal;
- and
- a clad layer made of metal and a fiber, wherein
- the core layer is copper or an alloy containing copper,
- the clad layer is formed of copper or the alloy containing copper and the fiber having a thermal expansion coefficient lower than a thermal expansion coefficient of copper,
- the wiring material has a stacked structure in which at least one surface of the core layer is closely adhered to the clad layer,
- the fiber in the clad layer is arranged so as to be parallel to the surface of the core layer,
- the fiber includes a fiber layer formed of a fiber arranged so as to be parallel to one direction and the fiber arranged in a direction perpendicular to the fiber arranged so as to be parallel to the one direction, and
- volume density of the fiber in the fiber layer increases with distance from the core layer in a stacking direction in the wiring material.
Semiconductor equipment, comprising:
- a wiring material including a core layer made of metal and a clad layer made of metal and a fiber;
- a semiconductor device including an electrode;
- and
- an insulating circuit substrate including a metal layer, wherein
- the clad layer is formed of copper or an alloy containing copper and a fiber having a thermal expansion coefficient lower than a thermal expansion coefficient of copper,
- the wiring material has a stacked structure in which at least one surface of the core layer is closely adhered to the clad layer,
- the semiconductor device is mounted on the insulating circuit substrate,
- an electrode of the semiconductor device and the core layer of the wiring material are connected to each other through the clad layer,
- the metal layer of the insulating circuit substrate and the core layer of the wiring material are connected to each other through the clad layer,
- the fiber in the clad layer is arranged so as to be parallel to the surface of the core layer,
- the fiber includes a fiber layer formed of a fiber arranged so as to be parallel to one direction and the fiber arranged in a direction perpendicular to the fiber arranged so as to be parallel to the one direction, and
- volume density of the fiber in the fiber layer increases with distance from the core layer in a stacking direction in the wiring material.
Dependencies are inferred from the claim text.