Composite Wafer and Method for Manufacturing the Same
AssigneeNGK Insulators, Ltd.
InventorsYasunori Iwasaki, Akiyoshi Ide, Yuji Hori, Tomoyoshi Tai, Sugio Miyazawa
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AssigneeNGK Insulators, Ltd.
InventorsYasunori Iwasaki, Akiyoshi Ide, Yuji Hori, Tomoyoshi Tai, Sugio Miyazawa
Estimating the term…
A composite wafer 10 includes a supporting substrate 12 and a semiconductor substrate 14 which are bonded to each other by direct bonding. The supporting substrate 12 is a translucent alumina substrate with an alumina purity of 99% or more. The linear transmittance of the supporting substrate 12 at the visible light range is 40% or less. Furthermore, the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrate 12 is 60% or more. The average crystal grain size of the supporting substrate 12 is 10 to μm. The semiconductor substrate 14 is a single crystal silicon substrate. Such a composite wafer 10 has insulation performance and thermal conduction comparable to those of a SOS wafer, can be manufactured at low cost, and can be easily made to have a large diameter.
A composite wafer comprising a supporting substrate and a semiconductor substrate which are bonded to each other by direct bonding,
A method for manufacturing a composite wafer comprising:
A composite wafer comprising a supporting substrate and a semiconductor substrate which are bonded to each other by direct bonding,
Dependencies are inferred from the claim text.