Silicon single crystal wafer, manufacturing method thereof and method of detecting defects
AssigneeLG Siltron Inc.
InventorWoo Young SIM
Life of this patent
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Abstract
A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.
Claims28
A silicon single crystal wafer comprising an IDP region that is divided into a NiG region and an NIDP region, wherein a Cu based defect is not detected in the IDP region, a Ni based defect is detected in the NiG region, and a Ni based defect is not detected in the NIDP region.
A silicon single crystal wafer, comprising:
- a first region having a first pulling speed;
- a second region having a second pulling speed, wherein the second pulling speed is higher than the first pulling speed;
- a third region having a third pulling speed, wherein the third pulling speed is higher than the second pulling speed;
- and
- wherein the second region is a region where a Ni based defect is detected but a Cu based defect is not detected.
A silicon single crystal wafer comprising:
- a VDP region in which a Cu based defect is detected;
- an NIDP region adjacent to the VDP region and in which both the Cu based defect and the Ni based defect are not detected;
- and
- an NiG region placed between the VDP region and the NIDP region, wherein the NiG region is a region where the Cu based defect is not detected but the Ni based defect is detected.
A method of manufacturing a silicon single crystal wafer that is formed as an NIDP region where a Ni based defect is not detected.
A method of detecting a silicon single crystal wafer, the method comprising:
- Ni-contaminating the silicon single crystal wafer;
- performing first heat treatment so as to form a core of a metal precipitate on the silicon single crystal wafer;
- performing second heat treatment to allow the core of the metal precipitate to grow;
- and
- confirming a defect in the silicon single crystal wafer.
Dependencies are inferred from the claim text.