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US 2014/0191369 A1Published application
Nitride semicondutor device
AssigneeHitachi Metals, Ltd.
InventorsTadayoshi TSUCHIYA, Naoki KANEDA, Tomoyoshi MISHIMA
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Abstract
A nitride semiconductor device includes a first nitride semiconductor layer, and an npn junction structure including a second nitride semiconductor layer of an n-type conductivity, a third nitride semiconductor layer of a p-type conductivity, and a fourth nitride semiconductor layer of an n-type conductivity layered in this order on the first nitride semiconductor layer. The third nitride semiconductor layer includes two or more uncovered regions which are uncovered with the fourth nitride semiconductor layer.
Claims7
A nitride semiconductor device, comprising:
- a first nitride semiconductor layer;
- and
- an npn junction structure comprising a second nitride semiconductor layer comprising an n-type conductivity, a third nitride semiconductor layer comprising a p-type conductivity, and a fourth nitride semiconductor layer comprising an n-type conductivity layered in this order on the first nitride semiconductor layer,
- wherein the third nitride semiconductor layer comprises two or more uncovered regions which are uncovered with the fourth nitride semiconductor layer.
1 more element
Dependencies are inferred from the claim text.