Semiconductor integrated circuit device

A semiconductor integrated circuit device having an ESD (Electro Static Discharge) protection circuit, wherein:

• the ESD protection circuit comprises:
• a first wiring extending in a first direction and electrically connected to a first terminal;
• a second wiring and a third wiring extending in the first direction, electrically connected to a power supply terminal or a ground terminal, and disposed on both sides of the first wiring respectively;
• a first diffusion region and a second diffusion region that are connected to and formed under the first wiring, having a same first conductivity type with each other, disposed between the second wiring and the third wiring, in a second direction perpendicular to the first direction, the first and second diffusion regions being at least partially separated from each other;
• a third diffusion region connected to and formed under the second wiring, having a second conductivity type, and disposed so as to be opposed to the first diffusion region in the second direction;
• and
• a fourth diffusion region connected to and formed under the third wiring, having the second conductivity type, and disposed so as to be opposed to the second diffusion region in the second direction,
• the third diffusion region, the first diffusion region, the second diffusion region and the fourth diffusion region are disposed in this order in the second direction, and
• the first conductivity type is different from the second conductivity type.