US 2014/0191366 A1 · High-K and Metal Filled Trench-Type EDRAM Capacitor with Electrode Depth and Dimension Control

Abstract

Partial removal of organic planarizing layer (OPL) material forms a plug of OPL material within an aperture that protects underlying material or electronic device such as a deep trench capacitor during other manufacturing processes. The OPL plug thus can absorb any differences or non-uniformity in, for example, etch rates across the chip or wafer and preserve recess dimensions previously formed. control of a lateral component of later removal of the OPL plug by etching also can increase tolerance of overlay error in forming connections and thus avoid loss in manufacturing yield.

Claims22

Dependent claims

A method of semiconductor device manufacture comprising steps of

forming an aperture in a layer of material extending over other material,
applying an organic planarizing layer (OPL) over a surface of said integrated circuit and within said apertures,
partially removing said OPL within said apertures to form OPL plugs in said apertures,
performing material removal steps around said apertures or OPL plugs,
removing said OPL plugs, and
performing additional processes on said electronic element.

3 more elements

Dependencies are inferred from the claim text.

High-K and Metal Filled Trench-Type EDRAM Capacitor with Electrode Depth and Dimension Control

Life of this patent

High-K and Metal Filled Trench-Type EDRAM Capacitor with Electrode Depth and Dimension Control

Life of this patent

Abstract

Claims22