Device design for partially oriented rutile dielectrics

A capacitive device comprising:

• a dielectric layer formed above a substrate wherein the dielectric layer comprises a first material;
• wherein a preferred crystal direction for the dielectric constant of the first material is parallel to a surface of the dielectric layer;
• a first trench formed within the dielectric layer wherein the first trench has at least one curved portion;
• a second trench formed within the dielectric layer wherein the second trench has at least one curved portion, wherein the second trench is disposed around a perimeter of the first trench, and wherein a ratio of a first distance from a common center point of the first trench and the second trench to an outside wall of the first trench and a second distance from the common center point to an inside wall of the second trench is in the range from 0.9 to 0.99;
• a second material formed within the first trench and a third material formed within the second trench, wherein each of the second material and the third material are conductive;
• wherein the first material is different from the second material and the third material;
• and
• wherein the first trench and the second trench are separated by a distance between 3-20 nm.